MOSFET asymmetry and gate-drain/source overlap effects on hot carrier reliability

The MOSFET gate-drain/source overlap is a critical factor in device performance. An understanding of trade-off between performance and reliability is important in process development. It is found that although the reduction of overlap can improve the performance, there is a sharp decrease in hot car...

Full description

Saved in:
Bibliographic Details
Published in2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual pp. 714 - 715
Main Authors Aur, S., Shyh-Horng Yang, Toan Tran
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Degradation
Doping profiles
Equations
Etching
Hot carriers
Implants
Instruments
MOSFET circuits
Neodymium
Surface fitting
Online AccessGet full text

Cover

More Information
Summary:The MOSFET gate-drain/source overlap is a critical factor in device performance. An understanding of trade-off between performance and reliability is important in process development. It is found that although the reduction of overlap can improve the performance, there is a sharp decrease in hot carrier reliability when the overlap is decreasing. More importantly we have found that the MOSFET asymmetry can degrade reliability even worse if overlap is small. The MOSFET asymmetry, gate-drain/source overlap and hot carrier reliability are studied on 90 nm technology.
ISBN:0780388038
9780780388031
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2005.1493219