A High Power Asymmetric Doherty Amplifier with Improved Linear Dynamic Range

An asymmetric high power extended Doherty amplifier, which has the extended peak efficiency over a 9-dB of output power and a linear dynamic range is presented in this paper. The power amplifier is designed by using two different LDMOS FET's for W-CDMA base station applications. To realize the...

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Bibliographic Details
Published in2006 IEEE MTT-S International Microwave Symposium Digest pp. 1348 - 1351
Main Authors Ju-Young Lee, Ji-Yeon Kim, Jong-Heon Kim, Kyoung-Joon Cho, Stapleton, S.P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2006
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Summary:An asymmetric high power extended Doherty amplifier, which has the extended peak efficiency over a 9-dB of output power and a linear dynamic range is presented in this paper. The power amplifier is designed by using two different LDMOS FET's for W-CDMA base station applications. To realize the peak efficiency extension and a linear dynamic range, a two times larger peaking device compared to the main device, and an unequal power divider is used. This asymmetric Doherty amplifier obtained a measured P1dB of 49.8 dBm. An efficiency of 31.1 % and an ACLR of -35 dBc are achieved at 9 dB back-off point, respectively
ISBN:9780780395411
0780395417
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2006.249499