Tri-axial high-g CMOS-MEMS capacitive accelerometer array

A chip-scale tri-axial CMOS-MEMS high-g accelerometer is demonstrated. The accelerometer uses an array of cantilever structures, electrically connected in parallel for capacitive sensing. The measured sensitivity is 3.02 muV/g for in-plane motion and 9.91 muV/g for out-of- plane motion. CMOS-MEMS in...

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Bibliographic Details
Published in2008 IEEE 21st International Conference on Micro Electro Mechanical Systems pp. 876 - 879
Main Authors Wung, A., Park, R.V., Rebello, K.J., Fedder, G.K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2008
Subjects
Accelerometers
Damping
Dielectric devices
Effective mass
Electrodes
Motion estimation
Piezoresistance
Semiconductor device measurement
Sensor arrays
Springs
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Summary:A chip-scale tri-axial CMOS-MEMS high-g accelerometer is demonstrated. The accelerometer uses an array of cantilever structures, electrically connected in parallel for capacitive sensing. The measured sensitivity is 3.02 muV/g for in-plane motion and 9.91 muV/g for out-of- plane motion. CMOS-MEMS integration allows the sensor to be lower in weight and volume than existing non-integrated piezoresistive and piezoelectric high-g accelerometers.
ISBN:9781424417926
1424417929
ISSN:1084-6999
DOI:10.1109/MEMSYS.2008.4443796