Dielectric and structural properties of iron doped titanate nano-composites

• Published in: 2007 International Workshop on Physics of Semiconductor Devices pp. 870 - 871
• Main Authors: Singh, D., Sharma, S.D., Saini, K.K., Kant, C., Singh, N., Jain, S.C., Sharma, C.P.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.12.2007
• Subjects: Communication industry; Dielectric constant; Dielectric losses; Dielectric materials; High-K gate dielectrics; Inorganic materials; Iron; Metal-insulator structures; Semiconductor materials; Titanium compounds
• ISBN: 9781424417278; 1424417279
• DOI: 10.1109/IWPSD.2007.4472659

TiO 2 has been used for gas sensing devices (Mohammadi et al., 2007) photo catalytic devices (Litter and Navio, 1996) and photoelectric devices (Levy, 1997). Recently the dielectric properties of TiO 2 have been of great interest for applications in the telecommunications industry due to its unusual high dielectric constant and low dielectric loss. The use of layers of high dielectric constant materials in small scale metal insulator semiconductor devices has been considered in numerous recent publications these materials unable to maintain the same capacitance density as SiO 2 films but provide a smaller leakage current density. Examples of such materials include tantalum and yttrium oxides (Moon et al., 1999) and titanium dioxide which has the largest dielectric constant value varying in the range of 25-100 (Tang et al, 1997).