Porosity content dependence of TDDB lifetime and flat band voltage shift by Cu diffusion in porous spin-on low-k

• Published in: 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual pp. 474 - 477
• Main Authors: Sang-Soo Hwang, Hee-Chan Lee, Hyun Wook Ro, Do Yeung Yoon, Young-Chang Joo
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2005
• Subjects: Capacitance measurement; Capacitance-voltage characteristics; Dielectric breakdown; Dielectric materials; Dielectric measurements; Nanoporous materials; Optical films; Semiconductor materials; Testing; Voltage
• ISBN: 0780388038; 9780780388031
• ISSN: 1541-7026; 1938-1891
• DOI: 10.1109/RELPHY.2005.1493131

The porosity dependence of Cu diffusion into the spin-on low-k dielectric having the same matrix with various porogen contents was studied using time dependent dielectric breakdown (TDDB) and capacitance voltage (C-V) measurements. Abrupt changes of the time to dielectric breakdown and the flat-band-voltage shift were observed when the porosity of the low-k was between 20% and 30%. Such a characteristic agrees with positronium annihilation lifetime spectroscopy (PALS) data, which indicates that the interconnectability of the pores abruptly increased for porosity between 20 and 30%. All the results suggest that the interconnection of pores in the low-k dramatically reduces the reliability of interconnects. The activation energy of Cu diffusion in the spin-on low-k dielectric without porosity was calculated to be 1.51 eV.