Simulation of a novel single junction thin film solar cell

A novel single junction thin film solar cell structure ITO/p- a-Si:H /i1- a-Si:H/i2- μc-Si:H/n- μc-Si:H/ITO is studied with Silvaco TCAD tool in this paper. The simulation data predicts that the thickness of the maximum conversion efficiency is between 250-500nm. For the best efficiency, the intrins...

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Published in2013 International Symposium on Next-Generation Electronics pp. 469 - 472
Main Authors Wan-Rou Chang, Jyi-Tsong Lin, Yi-Chuen Eng, Yu-Sheng Kuo, Yun-Ru Chen, Po-Hsieh Lin, Jian-Yuan Wang
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.02.2013
Subjects
Amorphous silicon
Indium tin oxide
Periodic structures
Photovoltaic cells
PIN photodiodes
Short-circuit currents
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Summary:A novel single junction thin film solar cell structure ITO/p- a-Si:H /i1- a-Si:H/i2- μc-Si:H/n- μc-Si:H/ITO is studied with Silvaco TCAD tool in this paper. The simulation data predicts that the thickness of the maximum conversion efficiency is between 250-500nm. For the best efficiency, the intrinsic μc-Si:H layer is predicted between 1500-2500nm. The results indicate the conversion efficiency is higher than that of the conventional amorphous silicon solar cell 7.53% and 8.14% for the conventional microcrystalline solar cells. To compare with the nanocrystalline (nc-Si:H) heterojunction thin film solar cell, the conversion efficiency of the proposed structure is increased more than 21.92%.
ISBN:1467330361
9781467330367
DOI:10.1109/ISNE.2013.6512400