Influence of external electric field on two-wave mixing feature in Ce: KNSBN crystal

We studied the influence of external electric field on two-wave mixing feature in a Ce: KNSBN crystal using a non simultaneous readout device on the best writing conditions (with best polarization of writing beam). The effective gain and diffraction efficiency of two-wave mixing increased as well as...

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Bibliographic Details
Published in2011 International Conference on Electronics, Communications and Control (ICECC) pp. 301 - 304
Main Authors Ying Wang, Yi-hui Jiang, Yan Li, Gui-ying Deng, Pan-lai Li, Su-fang Huai, Xu Li, Qing-lin Guo
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2011
Subjects
Crystals
Diffraction
Electric fields
external electric field
KNSBN crystal
Laser beams
Laser excitation
Optical beams
Time factors
two-wave mixing
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Summary:We studied the influence of external electric field on two-wave mixing feature in a Ce: KNSBN crystal using a non simultaneous readout device on the best writing conditions (with best polarization of writing beam). The effective gain and diffraction efficiency of two-wave mixing increased as well as the response time decreased as positive electric field increased applied along the c-axis of the crystal. The behaviors of two-wave mixing features mentioned were also observed in a negative electric field range of 0~2000V/cm, but the effective gain began to decrease while the negative electric field was increased upon 2000V/cm, the response time increased as well.
ISBN:1457703203
9781457703201
DOI:10.1109/ICECC.2011.6067758