The mathematical modeling of the MOS-transistors fabrication technique in modern TCAD-systems

Simulation of the MOS-transistors fabrication technique using TCAD (technology computer aided design) DIOS and TCAD Sentaurus process the most perspective TCAD-systems from Synopsys company at present was carried out in this work. Special attention was given to research of offered diffusion models a...

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Bibliographic Details
Published in2008 9th International Workshop and Tutorials on Electron Devices and Materials pp. 79 - 83
Main Authors Cherkaev, A.S., Makarov, E.A., Kalinin, S.V.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2008
Subjects
Accuracy
Boron
Computational modeling
DIOS
Integrated circuit modeling
Mathematical model
Modeling
MOS-transistor
Semiconductor process modeling
Sentaurus Process
Software packages
TCAD
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Summary:Simulation of the MOS-transistors fabrication technique using TCAD (technology computer aided design) DIOS and TCAD Sentaurus process the most perspective TCAD-systems from Synopsys company at present was carried out in this work. Special attention was given to research of offered diffusion models and capabilities of the mesh generation algorithm, as these factors have direct influence on final result of modeling and a total time of calculation. In addition, the obtained results were compared with similar calculations of this structure in ldquoFACTrdquo and MicroTec-3.02 software packages.
ISBN:9785778208933
5778208936
ISSN:1815-3712
DOI:10.1109/SIBEDM.2008.4585873