Comprehensive Study and Noise Analysis of GeSn-based p-n-p Heterojunction Phototransistors for Efficient Detection

This work presents analytical study of gain, noise behaviour, absorption coefficient and optical responsivity of Ge 1-x Sn x -based p-n-p Heterojunction Photo-Transistor. Estimated results ensure that HPTs can be used as an alternative of existing III-V based photodetectors.

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Bibliographic Details
Published in2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 11 - 12
Main Authors Kumar, Harshvardhan, Basu, Rikmantra
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2018
Subjects
Absorption
absorption coefficient
GeSn-alloy
Heterojunctions
HPTs
Optical fibers
Photonic band gap
Phototransistors
responsivity
Signal to noise ratio
Silicon
SNR
voltage gain
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Summary:This work presents analytical study of gain, noise behaviour, absorption coefficient and optical responsivity of Ge 1-x Sn x -based p-n-p Heterojunction Photo-Transistor. Estimated results ensure that HPTs can be used as an alternative of existing III-V based photodetectors.
ISSN:2158-3242
DOI:10.1109/NUSOD.2018.8570253