Analysis of drain current in short channel drain-extended triple gate FinFETs

A short channel drain-extended triple gate fin shaped field effect transistor (finFET) is designed and simulated and its various performance parameters has been analyzed using Sentaurus TCAD tools. Drain-extended triple gate finFET has better hot carrier reliability which results in increased ON cur...

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Bibliographic Details
Published in2013 International Mutli-Conference on Automation, Computing, Communication, Control and Compressed Sensing (iMac4s) pp. 494 - 497
Main Authors Soman, S., Nirmal, D., Nair, P. P., Ramya, M. S. A., Jeba, I. K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2013
Subjects
drain current
drain-extended triple gate finFET
FinFETs
high-k dielectric
hot carrier reliability
Leakage currents
Logic gates
ON/OFF ratio
Performance evaluation
short channel effect
Substrates
Threshold voltage
Triple gate (TG) finFET
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Summary:A short channel drain-extended triple gate fin shaped field effect transistor (finFET) is designed and simulated and its various performance parameters has been analyzed using Sentaurus TCAD tools. Drain-extended triple gate finFET has better hot carrier reliability which results in increased ON current and suppressed OFF current. The maximum ON current of the proposed device is found to be 2.37×10 -5 A/μm at V GS =0.4 V and maximum OFF current is found to be 1.108×10 -11 A/μm and hence an excellent ON/OFF ratio is achieved.
ISBN:1467350893
9781467350891
DOI:10.1109/iMac4s.2013.6526463