Low-Power High-Rensponsivity CMOS Temperature Sensor

This paper proposes a low-power CMOS temperature sensor based on subthreshold MOSFET operation. The circuit was designed on AMIS 0.5 mum technology and ocuppies a silicon area of 0.035 mm 2 . Simulations show a responsivity of -8.92 mV/C, a resolution of 0.004degC and power consumption of 10 muW.

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Bibliographic Details
Published in2008 IEEE Instrumentation and Measurement Technology Conference pp. 1234 - 1238
Main Authors Dantas, J. M. C., Costa, H. J. B., Dantas, J. P. M., Filho, F. A. Brito, Sousa, F. Rangel, Freire, R. C. S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2008
Subjects
Ambient intelligence
Circuit simulation
CMOS process
CMOS technology
Energy consumption
Fabrication
MOSFET
MOSFET circuits
PTAT
Sensor phenomena and characterization
Silicon
Subthreshold
Temperature Sensor
Temperature sensors
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Summary:This paper proposes a low-power CMOS temperature sensor based on subthreshold MOSFET operation. The circuit was designed on AMIS 0.5 mum technology and ocuppies a silicon area of 0.035 mm 2 . Simulations show a responsivity of -8.92 mV/C, a resolution of 0.004degC and power consumption of 10 muW.
ISBN:9781424415403
1424415403
ISSN:1091-5281
DOI:10.1109/IMTC.2008.4547230