A numerical study of UTC-PD structures with berylium as the p-dopant

We numerically investigate UTC PD structures that use highly diffusible beryllium (Be) as the p-type impurity in absorption layer An intrinsic InGaAs layer is added between the absorption layer and collection layer as a diffusion buffer. The influence of this buffer layer is analyzed, and the result...

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Bibliographic Details
Published in2013 12th International Conference on Optical Communications and Networks (ICOCN) pp. 1 - 6
Main Authors Zhu, Guoxuan, Liu, Xiaoqiang, Yan, Lin, Zhu, Lijun, Lin, Zhaoyong, Xiao, Qingsheng, Chen, Yujie, Zhang, Yonggang, Zhang, Yanfeng, Yu, Siyuan
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2013
Subjects
Absorption
absorption layer
buffer layer
Buffer layers
Doping
Electric fields
Gaussian doping
Impurities
In GaAs
Indium gallium arsenide
Time factors
UTC PD
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Summary:We numerically investigate UTC PD structures that use highly diffusible beryllium (Be) as the p-type impurity in absorption layer An intrinsic InGaAs layer is added between the absorption layer and collection layer as a diffusion buffer. The influence of this buffer layer is analyzed, and the results obtain shows that high responsivity and high speed can be achieved.
DOI:10.1109/ICOCN.2013.6617210