Scalable Analytical Model of 1.7 THz Cut-off Frequency Schottky Diodes Integrated in 55nm BiCMOS Technology

In this paper, an innovative Schottky diode architecture is proposed and implemented in 55 nm BiCMOS technology. A State-of-the-art 1.7 THz cut-off frequency is measured and an analytical scalable model is proposed and experimentally validated paving the way for further performance improvement. In a...

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Bibliographic Details
Published in2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) pp. 23 - 26
Main Authors Gidel, Vincent, Gianesello, Frederic, Chevalier, Pascal, Avenier, Gregory, Guitard, Nicolas, Milon, Victor, Buczko, Michel, Legrand, Charles-Alex, Luxey, Cyril, Ducournau, Guillaume
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2019
Subjects
Analytical models
BiCMOS integrated circuits
Capacitance
Integrated circuit modeling
Mathematical model
modeling
Resistance
Schottky diode
Schottky diodes
THz
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Summary:In this paper, an innovative Schottky diode architecture is proposed and implemented in 55 nm BiCMOS technology. A State-of-the-art 1.7 THz cut-off frequency is measured and an analytical scalable model is proposed and experimentally validated paving the way for further performance improvement. In addition, this analytical model can be integrated in a Design Kit library in order to enable sub-THz Schottky diode-based circuit designs in advanced BiCMOS.
ISSN:2375-0995
DOI:10.1109/RFIC.2019.8701728