An on-chip SiGe HBT characterization circuit for use in self-healing RF systems

An on-chip device characterization circuit that extracts the current gain of a SiGe HBT test transistor, and which can be useful in the context of various "self-healing" RF circuits and systems, is presented. The characterization circuit includes built-in temperature compensation that enab...

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Bibliographic Details
Published in2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) pp. 203 - 206
Main Authors Howard, Duane C., England, Troy D., Lourenco, Nelson E., Cardoso, Adilson S., Cressler, John D.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2013
Subjects
BIST
Current measurement
Gain measurement
HBT
PVT
Radio frequency
self-healing circuit
Semiconductor device measurement
SiGe
Silicon germanium
Temperature distribution
Temperature measurement
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Summary:An on-chip device characterization circuit that extracts the current gain of a SiGe HBT test transistor, and which can be useful in the context of various "self-healing" RF circuits and systems, is presented. The characterization circuit includes built-in temperature compensation that enables accurate measurement of the current gain of the test device over a wide temperature range. The device characterization circuit can also be used to measure variations in the current gain of the test device due to process, voltage, and temperature (PVT) variations, as well as other phenomena that can potentially degrade performance.
ISBN:9781479901265
1479901261
ISSN:1088-9299
2378-590X
DOI:10.1109/BCTM.2013.6798176