Investigation of Reliability Characteristics of Si Nanocrystal NOR Memory Arrays

In this work, data of a 32Mb Si-NC NOR flash memory product, fabricated in a 130nm ATMEL technology platform have been presented. Measurements have shown an average threshold voltage shift of 3V, without extrinsic bits even after cycling and data retention at 150degC. An in-depth study of gate distu...

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Bibliographic Details
Published in2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop pp. 71 - 72
Main Authors Jacob, S., Perniola, L., Festes, G., Bodnar, S., Coppard, R., Thiery, J.F., Pedron, T., Jalaguier, E., Boulanger, F., De Salvo, B., Deleonibus, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2007
Subjects
Dielectrics
Electrons
Flash memory
Jacobian matrices
Nanocrystals
Nonvolatile memory
Predictive models
Robustness
Silicon
Threshold voltage
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Summary:In this work, data of a 32Mb Si-NC NOR flash memory product, fabricated in a 130nm ATMEL technology platform have been presented. Measurements have shown an average threshold voltage shift of 3V, without extrinsic bits even after cycling and data retention at 150degC. An in-depth study of gate disturb has been performed, focusing on the influence of the HTO thickness.
ISBN:9781424407521
1424407524
ISSN:2159-483X
DOI:10.1109/NVSMW.2007.4290585