Effect of Reentrant Twin Corners on Directional Solidification of Polycrystalline Silicon
The solidification microstructure and crystal orientation have been investigated for solar cell grade high purity polycrystalline silicon through a unidirectional solidification technique. In the solidification velocity range of 1.25-2.5times10 -6 m/s, the grain size enlarges as solidification progr...
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Published in | 2006 IEEE 4th World Conference on Photovoltaic Energy Conference Vol. 1; pp. 1219 - 1222 |
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Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.05.2006
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Subjects | |
Online Access | Get full text |
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Summary: | The solidification microstructure and crystal orientation have been investigated for solar cell grade high purity polycrystalline silicon through a unidirectional solidification technique. In the solidification velocity range of 1.25-2.5times10 -6 m/s, the grain size enlarges as solidification progresses. Furthermore, large columnar grains contain many twin boundaries. However, in above the critical velocity around 40times10 -6 m/s, equiaxed structure appears. A model of two-dimensional nucleation on the reentrant corner was established, and the critical nucleus could be estimated to be 70 % to 80 % of the radius of the general two-dimensional nucleus. The reduction of the critical radius and undercooling on the reentrant corner could influence on the priority growth direction and the enlargement of the grain size |
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ISBN: | 1424400163 9781424400164 |
ISSN: | 0160-8371 |
DOI: | 10.1109/WCPEC.2006.279401 |