A comprehensive solution for BEOL variation characterization and modeling

A comprehensive variation model is critical to achieve both competitive design and manufacturing yield in advanced technologies. Conventionally, as long as FEOL (front end of line) statistical model is appropriate, BEOL (back end of line) variations given by lumping multiple variation sources into f...

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Bibliographic Details
Published in2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) pp. 307 - 310
Main Authors Chiang, Katherine, Jun-Fu Huang, Tai-Yu Cheng, Cheng Hsiao, Joshua Sun, Chun Cheng, Kuo-Pei Lu, Ke-Wei Su, Chung-Kai Lin, Kevin Chen, King-Ho Tam, Te-Yu Liu, Ke-Ying Su, Min-Chie Jeng
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2016
Subjects
BEOL
Clocks
Correlation
Delays
Global variation
Integrated circuit modeling
Local variation
Monte Carlo
Process variation
Semiconductor device modeling
Semiconductor process modeling
Statistical model
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Summary:A comprehensive variation model is critical to achieve both competitive design and manufacturing yield in advanced technologies. Conventionally, as long as FEOL (front end of line) statistical model is appropriate, BEOL (back end of line) variations given by lumping multiple variation sources into few corners is enough to achieve reliable simulation results. However, as BEOL contribution is becoming more important with device scaling, simulation results with conventional corner model may not always produce optimal design margin. We thus propose a more comprehensive solution for BEOL variations characterization and modeling associated with statistical Monte Carlo simulation.
ISSN:1946-1577
DOI:10.1109/SISPAD.2016.7605208