Non-full depletion mode and its experimental realization of the lateral superjunction

• Published in: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 475 - 478
• Main Authors: Zhang, Wentong, Pu, Song, Lai, Chunlan, Ye, Li, Cheng, Shikang, Zhang, Sen, He, Boyong, Wang, Zhuo, Luo, Xiaorong, Qiao, Ming, Li, Zhaoji, Zhang, Bo
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2018
• Subjects: breakdown voltage VB; Doping; Electric breakdown; Electric fields; ES-SJ; LDMOS; MOSFET; non-full depletion (NFD) mode; Resists; Silicon; sp; Substrates; the minimum R on
• ISSN: 1946-0201
• DOI: 10.1109/ISPSD.2018.8393706

To realize the minimum specific on-resistance R on, sp of the lateral superjunction (SJ) devices, the low resistance characteristic of the SJ should be adequately used and the adverse influence of substrate-assisted depletion (SAD) effect on the breakdown voltage V B should be eliminated. From our previous equivalent substrate (ES) model, the SAD effect is completely suppressed if the ES is optimized. In this paper, the balanced symmetric SJ satisfying the optimized ES condition is defined as the ES-SJ. Based on the ES-SJ concept, the non-full depletion (NFD) mode of the lateral SJ is proposed and experimentally realized for the first time. In the experiments, the optimized ES is obtained by a linearly doped charge compensation layer (CCL) with a field plate covering the full drift region and the NFD SJ is implemented with a narrow width of 0.8 μm by implanting the SJ region thrice. The measured results exhibit a R on, sp of 30.9 mΩ·cm 2 with a V B of 477 V, which obtains a reduction in R on, sp by 67.8% when compared with other SJ devices under the similar V B .