Process options for improving electromigration performance in 32nm technology and beyond

In this paper we present process options to close the gap between electromigration performance needs by design and process performance. We are going to present reliability data for metal capping and advanced copper surface cleaning processes. These processes are showing very good performance and ext...

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Published in2009 IEEE International Reliability Physics Symposium pp. 832 - 836
Main Authors Aubel, O., Hohage, J., Feustel, F., Hennesthal, C., Mayer, U., Preusse, A., Nopper, M., Lehr, M.U., Boemmels, J., Wehner, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2009
Subjects
Alloying
Copper
Degradation
Dielectrics
Electric breakdown
Electromigration
Electrons
ILD breakdown strength
interface engineering
metal capping
Reliability engineering
Surface cleaning
Surface resistance
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Summary:In this paper we present process options to close the gap between electromigration performance needs by design and process performance. We are going to present reliability data for metal capping and advanced copper surface cleaning processes. These processes are showing very good performance and extendibility to 32 nm technology nodes and beyond.
ISBN:9781424428885
1424428882
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2009.5173361