LNA modules for the WR4 (170-260 GHz) frequency range

In this work, we report on developments toward ultra-low noise amplifier modules for the WR4 frequency range, covering 170-260 GHz. The amplifiers in question utilize 35 nm HEMT transistors on a 50 μm thick InP substrate, and were developed at NGC. While recent work in this frequency band has demons...

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Bibliographic Details
Published in2014 IEEE MTT-S International Microwave Symposium (IMS2014) pp. 1 - 4
Main Authors Varonen, M., Samoska, L., Fung, A., Padmanahban, S., Kangaslahti, P., Lai, R., Sarkozy, S., Soria, M., Owen, H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
Abstracts
E-plane transitions
Gain measurement
HEMTs
Lead
LNAs
MMICs
Noise
Noise measurement
noise temperature
WR4
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Summary:In this work, we report on developments toward ultra-low noise amplifier modules for the WR4 frequency range, covering 170-260 GHz. The amplifiers in question utilize 35 nm HEMT transistors on a 50 μm thick InP substrate, and were developed at NGC. While recent work in this frequency band has demonstrated the usefulness and advanced technology of utilizing integrated waveguide transitions fabricated on the high dielectric constant MMIC amplifiers themselves, we present evidence here that more standard, cost effective techniques like merging low-loss quartz probes with short wire bonds can provide excellent noise performance, even at these high frequencies. The amplifiers discussed in this paper demonstrate a record 600K noise (4.8 dB) at 220 GHz and 700K (5.2 dB) noise at 240 GHz.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2014.6848291