Low leakage normally-off tri-gate GaN MISFET

A new tri-gate normally-off GaN metal-insulator-semiconductor field effect transistor (MISFET) is presented in this paper. By using a three-dimensional gate structure with combination of a sub-micron gate recess, the new device achieves a very low off-state drain leakage current of 0.6 μA/mm at a br...

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Bibliographic Details
Published in2012 24th International Symposium on Power Semiconductor Devices and ICs pp. 33 - 36
Main Authors Bin Lu, Matioli, E., Palacios, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2012
Subjects
Aluminum gallium nitride
Gallium nitride
GaN
Leakage current
Logic gates
MISFET
MISFETs
noramlly-off
power electronics
Threshold voltage
tri-gate
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Summary:A new tri-gate normally-off GaN metal-insulator-semiconductor field effect transistor (MISFET) is presented in this paper. By using a three-dimensional gate structure with combination of a sub-micron gate recess, the new device achieves a very low off-state drain leakage current of 0.6 μA/mm at a breakdown voltage of 565 V while maintains a low on-resistance of 2.1 mΩ·cm 2 . The new device has an on/off current ratio of more than 8 orders of magnitude and a sub-threshold slope of 86±9 mV/decade. The threshold voltage of the new device is 0.80±0.06 V with a maximum drain current of 530 mA/mm. These results confirm the great potential of the tri-gate normally-off GaN-on-Si MISFETs for the next generation of power electronics.
ISBN:9781457715945
1457715945
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2012.6229016