Design and fabrication of a low insertion loss and high isolation Si-based micro-switch using MEMS technology

This study designs and fabricates a novel suspending micro-switch on silicon substrate using surface micromachining techniques for wireless communication. The proposed Si-based micro-switch with dimensions of 750 μm × 850 μm × 500 μm is constructed of one bottom GSG electrode, four non-isometric spr...

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Bibliographic Details
Published in2011 IEEE SENSORS Proceedings pp. 754 - 757
Main Authors Huang, I.-Yu, Chian-Hao Sun, Guan-Ming Chen, Chang-Yu Lin, Wei-Hsun Chien
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2011
Subjects
Capacitance
Electrodes
Insertion loss
Micromechanical devices
Radio frequency
Silicon
Switches
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Summary:This study designs and fabricates a novel suspending micro-switch on silicon substrate using surface micromachining techniques for wireless communication. The proposed Si-based micro-switch with dimensions of 750 μm × 850 μm × 500 μm is constructed of one bottom GSG electrode, four non-isometric springs and two arched top electrodes. Using commercial Ansoft-HFSS simulation software, the dimension is optimized for development of a Si-based micro-switch with low loss, high isolation and low capacitance. The implemented Si-based micro-switch demonstrates very low insertion loss (-1.6 dB at on-state), very high isolation (-58.46 dB at off-state) and low capacitance (1.78 fF at 4.5 GHz).
ISBN:9781424492909
1424492904
ISSN:1930-0395
2168-9229
DOI:10.1109/ICSENS.2011.6127037