Normally-off AlGaN/GaN Low-Density-Drain HEMTs (LDD-HEMT) with Enhanced Breakdown Voltage and Suppressed Current Collapse

We report a low-density drain HEMT (LDD-HEMT) that exhibits enhanced breakdown voltage and reduced current collapse. The LDD region is created by introducing negatively charged fluorine ions in the region between the gate and drain electrodes, effectively modifying the surface field distribution on...

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Bibliographic Details
Published inProceedings of the 19th International Symposium on Power Semiconductor Devices and IC's pp. 257 - 260
Main Authors Di Song, Jie Liu, Zhiqun Cheng, Tang, W.C.-W., Kei May Lau, Chen, K.J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2007
Subjects
Aluminum gallium nitride
Cutoff frequency
Electrodes
Gallium nitride
HEMTs
MODFETs
Plasma applications
Plasma devices
Plasma measurements
Plasma sources
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Summary:We report a low-density drain HEMT (LDD-HEMT) that exhibits enhanced breakdown voltage and reduced current collapse. The LDD region is created by introducing negatively charged fluorine ions in the region between the gate and drain electrodes, effectively modifying the surface field distribution on the drain side of the HEMT without using field plate electrodes. Without changing the device physical dimensions, the breakdown voltage can be improved by 50% in LDD-HEMT and the current collapse can be reduced. No degradation of current cutoff frequency (f t ) and slight improvement in power gain cutoff frequency (f max ) are achieved in the LDD-HEMT, owing to the absence of any additional field plate electrode.
ISBN:1424410959
9781424410958
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2007.4294981