Energy Optimization Nanotechnology Structures CNTFET GaAs

• Published in: 2018 7th International Conference on Renewable Energy Research and Applications (ICRERA) pp. 522 - 526
• Main Authors: Benbouza, M. S., Hocine, D., Zid, Y., Benbouza, A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.10.2018
• Subjects: Carbon nanotubes; CCNTFE; CNTFET; CNTFETs; GaAs; Gallium arsenide; Inductance; Inductance active; Integrated circuit modeling; Nanotechnology; Nanotube carbon; Resistance
• ISSN: 2572-6013
• DOI: 10.1109/ICRERA.2018.8566989

The high frequency properties of CNTs (Nano Tube Carbon) are very interesting because of their extraordinary structure, electrical and mechanical. They offer good electrical properties such as high conductivity. The conductivity value of single-walled CNT conductors is 70 times higher than that of copper. For semiconductors, load mobility values greater than 100000 cm2 /Vs compared to 1500 cm2/Vs for amorphous silicon used in the electronics industry. The current density greater than 10 9 . As a result, the impedance of an CNT structure can be considered as a function of the diameter and length of the nanotube and the internal physical parameters. Such structures in electronics don't use the basic components such as resistors, capacitors and coils but active elements such as CNT transistors. In this article, we will present new structures based on nanotube-carbon transistors CNTFET that offer low energy consumption, and we compare them with classical active structures. We will see and prove that a CNTFET operating at a frequency greater than or equal to 1 GHz is less energy intensive than a conventional FET.