Failure mechanism of E-FUSE for a production chip during the ESD zapping event

On-chip electrical fuse (E-FUSE) with electrostatic discharge (ESD) protection scheme failure during point-to-point ESD stress has been reported and analyzed. ESD current flowing through the power bus-line and back-to-back diodes induces the potential difference between two ground domains. Thus indu...

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Bibliographic Details
Published in2017 IEEE International Reliability Physics Symposium (IRPS) pp. PM-1.1 - PM-1.4
Main Authors Linewih, Handoko, Jian-Hsing Lee, Marimuthu, Sevashanmugam, Tze-Ho Chan
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2017
Subjects
Bipolar-CMOS-DMOS (BCD)
Clamps
Electrical fuse (E-FUSE)
Electrostatic Discharge (ESD)
Electrostatic discharges
Failure analysis
Fuses
Human-body model (HBM)
Programming
Stress
Transistors
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Summary:On-chip electrical fuse (E-FUSE) with electrostatic discharge (ESD) protection scheme failure during point-to-point ESD stress has been reported and analyzed. ESD current flowing through the power bus-line and back-to-back diodes induces the potential difference between two ground domains. Thus induces activation of the control circuitry to programming mode, allowing E-FUSE as part of ESD discharge path.
ISSN:1938-1891
DOI:10.1109/IRPS.2017.7936383