APA (7th ed.) Citation

Alian, A., Kazzi, S. E., Verhulst, A., Milenin, A., Pinna, N., Ivanov, T., . . . Collaert, N. (2018, June). Record 47 mV/dec top-down vertical nanowire InGaAs/GaAsSb tunnel FETs. 2018 IEEE Symposium on VLSI Technology, 133-134. https://doi.org/10.1109/VLSIT.2018.8510619

Chicago Style (17th ed.) Citation

Alian, Alireza, Salim El Kazzi, Anne Verhulst, Alexey Milenin, Nicolo Pinna, Tsvetan Ivanov, Dennis Lin, Dan Mocuta, and Nadine Collaert. "Record 47 MV/dec Top-down Vertical Nanowire InGaAs/GaAsSb Tunnel FETs." 2018 IEEE Symposium on VLSI Technology Jun. 2018: 133-134. https://doi.org/10.1109/VLSIT.2018.8510619.

MLA (9th ed.) Citation

Alian, Alireza, et al. "Record 47 MV/dec Top-down Vertical Nanowire InGaAs/GaAsSb Tunnel FETs." 2018 IEEE Symposium on VLSI Technology, Jun. 2018, pp. 133-134, https://doi.org/10.1109/VLSIT.2018.8510619.