Record 47 mV/dec top-down vertical nanowire InGaAs/GaAsSb tunnel FETs

Pocketed vertical nanowire InGaAs/GaAsSb tunnel FETs (TFET) with sub-threshold swing (SS) reaching 47 mV/dec are demonstrated. The achieved sub-threshold performance is the steepest reported so far for a top-down TFET in the III-V material system. Smooth vertical wires with diameters as narrow as 30...

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Bibliographic Details
Published in2018 IEEE Symposium on VLSI Technology pp. 133 - 134
Main Authors Alian, Alireza, Kazzi, Salim El, Verhulst, Anne, Milenin, Alexey, Pinna, Nicolo, Ivanov, Tsvetan, Lin, Dennis, Mocuta, Dan, Collaert, Nadine
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2018
Subjects
Doping
Junctions
Logic gates
Performance evaluation
Silicon
TFETs
Wires
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ISSN2158-9682
DOI10.1109/VLSIT.2018.8510619

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Summary:Pocketed vertical nanowire InGaAs/GaAsSb tunnel FETs (TFET) with sub-threshold swing (SS) reaching 47 mV/dec are demonstrated. The achieved sub-threshold performance is the steepest reported so far for a top-down TFET in the III-V material system. Smooth vertical wires with diameters as narrow as 30 nm are achieved using a CH 4 based dry etch process. Drive current at 0.35 V supply voltage approaches 0.7 μA/μm for a fixed I off of 1 nA/μm.
ISSN:2158-9682
DOI:10.1109/VLSIT.2018.8510619