Design of GaAs-based pseudomorphic HEMTs by 2D device simulations

In this paper, AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMT's) was optimized by means of 2D device simulation. The commercial 2D device simulator Taurus-MEDICI is used to study the effect of varying barrier or supply doping concentration, N/sub Dsupply/ on the gate...

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Bibliographic Details
Published inICSE 2004 : 2004 IEEE International Conference on Semiconductor Electronics : proceedings : December 7-9, 2004, Kuala Lumbur, Malaysia p. 5 pp.
Main Authors Rahim, A.I.A., Muhammad, N.F.I., Sanusi, R., Yahya, M.R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2004
Subjects
Capacitance
Character generation
Cost function
Cutoff frequency
Doping
Gallium arsenide
HEMTs
Indium gallium arsenide
MODFETs
PHEMTs
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Summary:In this paper, AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMT's) was optimized by means of 2D device simulation. The commercial 2D device simulator Taurus-MEDICI is used to study the effect of varying barrier or supply doping concentration, N/sub Dsupply/ on the gate characteristics and current-gain cutoff frequency (f/sub T/) of the PHEMT. We show that values of f/sub T/ in excess of 100GHz can be obtained by optimizing the supply doping concentration.
ISBN:9780780386587
0780386582
DOI:10.1109/SMELEC.2004.1620930