Improvement of switching trade-off characteristics between noise and loss in high voltage MOSFETs

A new MOS-gate structure was proposed and demonstrated to improve the switching trade-off characteristics between noise and loss in high-voltage MOSFETs. The lightly p-doped dummy base layer under the gate electrode modulates C gd -V ds curve due to the depletion under high applied voltage and the t...

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Bibliographic Details
Published in2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs pp. 316 - 319
Main Authors Saito, W., Aida, S., Koduki, S., Izumisawa, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2011
Subjects
Capacitance
Logic gates
Loss measurement
MOSFETs
Noise
Surges
Switches
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Summary:A new MOS-gate structure was proposed and demonstrated to improve the switching trade-off characteristics between noise and loss in high-voltage MOSFETs. The lightly p-doped dummy base layer under the gate electrode modulates C gd -V ds curve due to the depletion under high applied voltage and the turn-off dV/dt can be suppressed even with high-speed switching. The fabricated device showed the surge voltage suppression of 50 V or the turn-off loss reduction of 20% in the turn-off switching test with an inductive load. In the flyback converter operation, it was also shown that the trade-off characteristics between the radiation noise and total power loss were improved by the proposed dummy base structure.
ISBN:9781424484256
1424484251
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2011.5890854