Double gate junctionless MOSFET simulation and comparison with analytical model

• Published in: RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics pp. 410 - 413
• Main Authors: Guang-Ming Zhang, Yi-Kai Su, Hsin-Yi Hsin, Yao-Tsung Tsai
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.09.2013
• Subjects: C++; Doping; Double gate; Electric potential; Equations; Junctionless MOSFET; Logic gates; Mathematical model; MOSFET; semiconductor simulation; Threshold voltage
• DOI: 10.1109/RSM.2013.6706578

This paper uses the C++ to develop an adapted band matrix solver to simulate the i-v curve and the drain current of the 2-D double-gate n-channel MOSFET, including different doping concentrations which from 5×10 (cm -3 ) to 5×10 (cm -3 ) and channel thickness which from 5 nm to 15 nm. And it discusses the threshold voltage from the i-v g curve and selects the more appropriate doping concentration and channel thickness to complete the following experiments. And then it simulates if-vg curve to determine threshold voltage which can present the channel on-off situation and calculates drain current which is in different gate voltage. It also can simulate the electric potential of the x-axis and y-axis. In the figure of the electric potential we can obtain the depletion width. It also analyzes the subthreshold, the linear and the saturation region in i-v curve, and we can find out the values of sub-threshold swing in the subthreshold region of the i-v curve and the value of the drain current in the saturation region of the i-v curve. It compares the results with the other reference papers. Finally, the equations of the threshold voltage can be developed, and we calculate the threshold voltage of double-gate n-channel MOSFET. The result obtained by the equation of the threshold voltage will be compared with result by 2-D simulation. The depletion width can be obtained as an analytical equation. The analytical depletion width can be verified by the figure of the x-axis and y-axis electric potential from 2-D simulation. The 2-D simulation also verifies the result with the drain current equation which is obtained by Pois-son's equation. For circuit application, an inverter including a double-gate n-channel MOSFET and a 100kΩ resistor will be used to simulate the v o -v i characteristics and analyzes the parameters of the inverter (e.g. V Oh , V Ol , V ih , V il , V S ), and the noise margin (e.g. NM L , NM H ) will be calculated in order to determine the inverter's performance and quality.