Lifetime prediction of ultra-thin gate oxide PMOSFETs submitted to hot hole injections

In this paper, we show that the effect of hot hole injections in ultra-thin oxide P-MOSFETs, is merged into the hole tunneling through the gate oxide. Thus, extrapolated lifetime techniques have to take into account both mechanisms. Even if quantitative distinction is difficult, we propose a first a...

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Bibliographic Details
Published in2005 IEEE International Integrated Reliability Workshop p. 5 pp.
Main Authors Di Gilio, T., Bravaix, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
CMOS technology
Current measurement
Degradation
Electrons
Hot carrier injection
Hot carriers
MOSFETs
Stress
Tunneling
Voltage
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Summary:In this paper, we show that the effect of hot hole injections in ultra-thin oxide P-MOSFETs, is merged into the hole tunneling through the gate oxide. Thus, extrapolated lifetime techniques have to take into account both mechanisms. Even if quantitative distinction is difficult, we propose a first attempt to distinguish both contributions. This modelling allows to separate both mechanism consequences in relation to the extension of drain space charge region /spl Delta/L.
ISBN:9780780389922
0780389921
ISSN:1930-8841
2374-8036
DOI:10.1109/IRWS.2005.1609562