Effect of silicon substrate on the transmission characteristics of integrated antenna

The basic characteristics of integrated dipole antennas on a Si substrate for use in on-chip wireless interconnects have been studied. 2 mm long and 10 /spl mu/m wide integrated dipole antennas were fabricated on a Si substrate with a resistivity of 10 /spl Omega/-cm. and the transmission gain of th...

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Bibliographic Details
Published in2003 IEEE Topical Conference on Wireless Communication Technology pp. 144 - 145
Main Authors Kikkawa, T., Rashid, A.B.M.H., Watanabe, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2003
Subjects
Aluminum
Antenna measurements
Conductivity
Dipole antennas
Frequency
Protons
Scattering parameters
Silicon
Transmitting antennas
Ultra large scale integration
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Summary:The basic characteristics of integrated dipole antennas on a Si substrate for use in on-chip wireless interconnects have been studied. 2 mm long and 10 /spl mu/m wide integrated dipole antennas were fabricated on a Si substrate with a resistivity of 10 /spl Omega/-cm. and the transmission gain of the antenna was 38 dB at 20 GHz. The transmission gain could be improved by use of high resistivity Si substrates greater than 100 /spl Omega/-cm.
ISBN:0780381963
9780780381964
DOI:10.1109/WCT.2003.1321461