TiO2-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition

• Published in: IEEE electron device letters Vol. 35; no. 11; pp. 1091 - 1093
• Main Authors: Bo-Yi Chou, Ching-Sung Lee, Cheng-Long Yang, Wei-Chou Hsu, Han-Yin Liu, Meng-Hsueh Chiang, Wen-Ching Sun, Sung-Yen Wei, Sheng-Min Yu
• Format: Journal Article
• Language: English
• Published: IEEE 01.11.2014
• Subjects: AlGaN/GaN; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MOS-HEMT; non-vacuum ultrasonic spray pyrolysis deposition; Passivation; Schottky diodes; Silicon; TiO; MOS-HEMT; non-vacuum ultrasonic spray pyrolysis deposition; AlGaN/GaN; TiO2
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2014.2354643

High-k TiO 2 -dielectric Al 0.25 Ga 0.75 N/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) grown on Si substrates by using nonvacuum ultrasonic spray pyrolysis deposition technique are reported for the first time. The effective oxide thickness is 1.45 nm with layer thickness/dielectric constant of 20 nm/53.6. Pulse I-V and low-frequency noise spectra (1/f) are conducted to characterize the interface property. The gate leakage current I GD is decreased by three orders at V GD = -50 V as compared with a reference Schottky-gate device. Superior device characteristics are achieved for the present MOS-HEMT (Schottky-gate HEMT) for the gate dimensions of 1 μm × 100 μm including drain-source current density I DS at V GS = 0 V (I DSS0 ) of 384 (342) mA/mm, maximum I DS (I DS , max ) of 650 (511) mA/mm, maximum extrinsic transconductance (g m , max ) of 107 (110) mS/mm, two-terminal gate-drain breakdown voltage (BVGD) of -155 (-105) V, turn-ON voltage (VON) of 3.8 (1.8) V, ON-state breakdown (BVDS) of 139 (94) V, gate-voltage swing of 2.7 (1.7) V, and ON/OFF current ratio (I ON /I OFF ) of 4.5 x 10 5 (3.5 x 10 2 ).