Terahertz Self-Oscillations in Reverse Biased P-N Junctions

We have shown that at certain parameters of the avalanche InSb p-n junctions has the regime of self-oscillation. The frequency of self-oscillation is flight and is determined by attitude of speed of satiation of charge carriers toward the effective width of layer of increase. It changes in the range...

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Bibliographic Details
Published in2007 International Kharkov Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW) Vol. 1; pp. 201 - 203
Main Authors Lukin, K.A., Maksymov, P.P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2007
Subjects
Atomic layer deposition
Avalanche breakdown
Breakdown voltage
Charge carriers
Frequency
Impact ionization
Impurities
Microwave generation
P-n junctions
Position measurement
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Summary:We have shown that at certain parameters of the avalanche InSb p-n junctions has the regime of self-oscillation. The frequency of self-oscillation is flight and is determined by attitude of speed of satiation of charge carriers toward the effective width of layer of increase. It changes in the range of 0,2-0.5 THz. The amplitude of self-oscillation depends on the coefficient of multiplication of p-n junction, amplitude of injection current and concentration of impurity atoms. Its size is limited by the charge of mobile carriers. We showed that self-oscillation of current in p-n junctions took place at voltages of the reversed bias, exceeding voltage of avalanche breakdown and initiation of impact ionization in it by the current of satiation. To our knowledge this first time, when such effects were observed in avalanche p-n junctions. It is possible to use this effect for creation of semiconductor generator in the microwave waveband.
ISBN:9781424412372
1424412374
DOI:10.1109/MSMW.2007.4294608