An All-Silicon E-Band Backhaul-on-Glass Frequency Division Duplex Module with >24dBm PSAT & 8dB NF

E-Band Backhaul-on-Glass Frequency Division Duplex (FDD) modules combining SiGe BiCMOS transceivers (TRX) and power amplifiers (PA) with glass-integrated RF splitting/combining and diplexing are presented. The TRX ICs operate at 71-76 GHz (Low-Band) and 81-86 GHz (High-Band). The TX PSAT and RX NF o...

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Bibliographic Details
Published in2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) pp. 59 - 62
Main Authors Shahramian, Shahriar, Holyoak, Michael, Zierdt, Mike, Sayginer, Mustafa, Weiner, Joe, Singh, Amit, Baeyens, Yves
Format Conference Proceeding
LanguageEnglish
Published IEEE 19.06.2022
Subjects
Backhaul
Diplexer
E-Band
Frequency conversion
Glass
mm-Wave
Phase shift keying
Power Amplifier
Power amplifiers
Radio frequency
Radiofrequency integrated circuits
SiGe
Silicon
Transceiver
Transceivers
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Summary:E-Band Backhaul-on-Glass Frequency Division Duplex (FDD) modules combining SiGe BiCMOS transceivers (TRX) and power amplifiers (PA) with glass-integrated RF splitting/combining and diplexing are presented. The TRX ICs operate at 71-76 GHz (Low-Band) and 81-86 GHz (High-Band). The TX PSAT and RX NF of the FDD modules on average measure 24dBm and 8dB across the two operating bands. Each FDD module supports TX constellations up to 1024-QAM (<2% EVM at 15dBm output) and data rates up to 24Gb/s (64-QAM at 20dBm output). Complete FDD measurements mimicking distances from 2km to 20km demonstrate bidirectional constellations up to 256-QAM and data-rates up to 24Gb/s.
ISSN:2375-0995
DOI:10.1109/RFIC54546.2022.9863150