Ultra-Low Switching Voltage Induced by Inserting SiO2 Layer in Indium-Tin-Oxide-Based Resistance Random Access Memory

A lower switching voltage of indium-tin-oxide (ITO)-based resistance random access memory (RRAM) with an inserted SiO 2 thin film was presented. The amplitude of switching voltage of device was below 0.2 V whether measured by direct current or alternating current sweep operation. Notably, the observ...

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Bibliographic Details
Published inIEEE electron device letters Vol. 37; no. 10; pp. 1276 - 1279
Main Authors Chih-Cheng Shih, Wen-Jen Chen, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Yi-Ting Tseng, Cheng-Hsien Wu, Wan-Ching Su, Min-Chen Chen, Hui-Chun Huang, Ming-Hui Wang, Jung-Hui Chen, Jin-Cheng Zheng, Sze, Simon M.
Format Journal Article
LanguageEnglish
Published IEEE 01.10.2016
Subjects
conduction current fitting
Electrodes
Indium tin oxide
ITO
oxygen concentration gradient
Random access memory
Resistance
RRAM
Switches
Temperature measurement
Voltage measurement
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Summary:A lower switching voltage of indium-tin-oxide (ITO)-based resistance random access memory (RRAM) with an inserted SiO 2 thin film was presented. The amplitude of switching voltage of device was below 0.2 V whether measured by direct current or alternating current sweep operation. Notably, the observed reset voltage increased with temperature. To clarify the switching mechanism, conduction current fitting and switching voltage statistics were applied to explore the regular voltage variation dependent on temperature. In addition, a reaction model was proposed to explain the oxygen concentration gradient induced between the inserted SiO 2 and ITO electrode on the ITO-based RRAM device.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2599218