A deep level transient spectroscopy study of vacancy-related defect profiles in channeled ion implanted silicon

• Published in: 2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) pp. 437 - 440
• Main Authors: Lay, M.D.H., McCallum, J.C., de M Azevedo, G., Deenapanray, P.N.K., Jagadish, C.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2002
• Subjects: Electronic mail; Implants; Ion beams; Ion implantation; Laser beams; Paints; Physics computing; Quantum computing; Silicon; Spectroscopy
• ISBN: 0780375718; 9780780375710
• ISSN: 1097-2137; 2377-5505
• DOI: 10.1109/COMMAD.2002.1237284

The effect of implantation angle on the profile of vacancy-related defects, represented by the divacancy and vacancy-phosphorus centres, in n-type Cz-Si implanted with 450 keV P or 600 keV Si ions to a dose of 2 /spl times/ 10/sup -9/ ions/spl middot/cm/sup -2/ , has been examined using deep level transient spectroscopy depth profiling. Implants were performed with samples aligned with 10/spl deg/ twists from the [110] planar direction and various tilts from the axis. The peak depth of the VP/V/sub 2/ profile exhibits a systematic variation with the implantation angle: shifting towards the surface, narrowing and increasing in peak concentration as the implantation angle is progressively varied from the aligned direction. For well-channeled 450 keV P ions, the peak in the defect profile is approximately 0.9 microns deeper than the peak in the vacancy profile predicted using the binary collision codes MARLOWE and Crystal-TCAS. The effect of the surface proximity on defect concentrations has been considered by comparing those profiles obtained for 450 keV P implanted samples with those of 600 keV Si implanted samples.