Design optimization of RF MEMS SP4T and SP6T switch

In this paper, improved RF MEMS SP4T and SP6T switches using a new design and layout topology, having significant impact on the RF characteristics of the device are presented. The device takes advantage of the CPW transmission line with small width and spacing configured for 50 Omega line impedance...

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Bibliographic Details
Published in2009 International Semiconductor Conference Vol. 2; pp. 443 - 446
Main Authors Roy, S.C., Rangra, K.J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2009
Subjects
Coplanar waveguides
Design optimization
Impedance
Insertion loss
Isolation
Ohmic contacts
Radio frequency
Radiofrequency microelectromechanical systems
RF MEMS
SP4T
SP6T
Switches
Topology
Transmission lines
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Summary:In this paper, improved RF MEMS SP4T and SP6T switches using a new design and layout topology, having significant impact on the RF characteristics of the device are presented. The device takes advantage of the CPW transmission line with small width and spacing configured for 50 Omega line impedance in ohmic contact SPST switch. The results show significant improvement in insertion loss and isolation without any significant changes in other electromechanical and RF parameters. A systematic comparison of different configurations of CPW designs and SPST switch is performed. The simulated insertion loss and isolation are better than -0.238 dB and -53.002 dB obtained for SP4T and -0.2956 dB and -57.217 dB for SP6T switch at 8 GHz respectively.
ISBN:1424444136
9781424444137
ISSN:1545-827X
2377-0678
DOI:10.1109/SMICND.2009.5336681