Reliability testing of TIM materials with thermal transient measurements

In this paper a power cycling based in-situ reliability testing method is discussed for TIM materials. The material under test is put between the cooling surface of a TO-220 packaged semiconductor device and a cold-plate, like during normal operation while the whole assembly is fixed by a constant f...

Full description

Saved in:
Bibliographic Details
Published in2009 11th Electronics Packaging Technology Conference pp. 823 - 827
Main Authors Vass-Varnai, A., Sarkany, Z., Rencz, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2009
Subjects
Assembly
Cooling
Materials reliability
Materials testing
Semiconductor device packaging
Semiconductor device testing
Semiconductor devices
Semiconductor materials
Temperature measurement
Temperature sensors
Online AccessGet full text

Cover

More Information
Summary:In this paper a power cycling based in-situ reliability testing method is discussed for TIM materials. The material under test is put between the cooling surface of a TO-220 packaged semiconductor device and a cold-plate, like during normal operation while the whole assembly is fixed by a constant force. The heat is generated by powering the device in the package at the junction area. The generated heat is lead through the TIM into the cold-plate. The elevation of the junction temperature is used as a sensor to check the thermal property changes of the TIM. The heating power is cyclically switched on and off, and the junction temperature is measured after each cycle by a thermal transient tester. Slight changes in the junction temperature can be detected which correspond to the structural changes occurring in the heat-flow path. It is verified by the structure functions that the temperature changes originate in fact from the TIM layer.
ISBN:1424450993
9781424450992
DOI:10.1109/EPTC.2009.5416437