Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes
This paper reports a systematic investigation of flatband voltage (V fb ), properties for HfO 2 -SiO 2 -Si capacitors using metal alloy electrodes of Pt-W alloy as a means of tuning work function (WF). It was found that the value of V fb , for W (lower WF) is retained after forming gas annealing (FG...
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Published in | 2006 International Workshop on Nano CMOS pp. 160 - 162 |
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Main Authors | , , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.01.2006
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Subjects | |
Online Access | Get full text |
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Summary: | This paper reports a systematic investigation of flatband voltage (V fb ), properties for HfO 2 -SiO 2 -Si capacitors using metal alloy electrodes of Pt-W alloy as a means of tuning work function (WF). It was found that the value of V fb , for W (lower WF) is retained after forming gas annealing (FGA) and oxidizing gas annealing (OGA) processes, while that for Pt (higher WF) strongly depends on the annealing condition. The difference in V fb , between Pt and W is 0.34 V at most, which is smaller compared with the WF difference of 0.8 eV. |
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ISBN: | 142440603X 9781424406036 |
DOI: | 10.1109/IWNC.2006.4570988 |