Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes

This paper reports a systematic investigation of flatband voltage (V fb ), properties for HfO 2 -SiO 2 -Si capacitors using metal alloy electrodes of Pt-W alloy as a means of tuning work function (WF). It was found that the value of V fb , for W (lower WF) is retained after forming gas annealing (FG...

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Bibliographic Details
Published in2006 International Workshop on Nano CMOS pp. 160 - 162
Main Authors Ohmori, K., Ahmet, P., Shiraishi, K., Watanabe, H., Akasaka, Y., Yamabe, K., Yoshitake, M., Chang, K.-S., Green, M.L., Yamada, K., Chikyow, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2006
Subjects
Annealing
Channel bank filters
CMOS technology
Electrodes
Hafnium oxide
High K dielectric materials
High-K gate dielectrics
Materials science and technology
Thermal stability
Voltage
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Summary:This paper reports a systematic investigation of flatband voltage (V fb ), properties for HfO 2 -SiO 2 -Si capacitors using metal alloy electrodes of Pt-W alloy as a means of tuning work function (WF). It was found that the value of V fb , for W (lower WF) is retained after forming gas annealing (FGA) and oxidizing gas annealing (OGA) processes, while that for Pt (higher WF) strongly depends on the annealing condition. The difference in V fb , between Pt and W is 0.34 V at most, which is smaller compared with the WF difference of 0.8 eV.
ISBN:142440603X
9781424406036
DOI:10.1109/IWNC.2006.4570988