A compact current-voltage model for carbon nanotube field effect transistors

We report deriving a compact model for CNTFETs, using modified current- voltage relations, commonly used in modeling of CNTFETs. A carbon nanotube with 1.7 nm diameter and 5 nm length has been simulated with a layer of ZrO 2 as oxide layer. The thickness of the oxide layer has been considered to be...

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Bibliographic Details
Published in2008 International Semiconductor Conference Vol. 2; pp. 359 - 362
Main Authors Hosseinzadegan, H., Aghababa, H., Zangeneh, M., Afzali-kusha, A., Forouzandeh, B.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2008
Subjects
Carbon nanotubes
CNTFETs
Computational modeling
Energy states
Equations
Insulation
MOSFETs
Photonic band gap
Semiconductivity
Threshold voltage
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Summary:We report deriving a compact model for CNTFETs, using modified current- voltage relations, commonly used in modeling of CNTFETs. A carbon nanotube with 1.7 nm diameter and 5 nm length has been simulated with a layer of ZrO 2 as oxide layer. The thickness of the oxide layer has been considered to be 2 nm. Density of states as a function of Fermi level is considered quadratic for both subthreshold and saturation regime. In this paper, the CNTFET drain current and energy level is derived analytically. Finally, the variation of CNTFET drain current versus gate-source and drain-source voltages will be presented though simulation.
ISBN:1424420040
9781424420049
ISSN:1545-827X
2377-0678
DOI:10.1109/SMICND.2008.4703425