Development of diffusion barriers for Ti/Al based ohmic contact to AlGaN/GaN heterostructures

We tested various ohmic contact metallizations schemes on AlGaN/GaN heterostructures to achieve good surface topography and proper line edge definition. Ti, Ru, Pt and Mo barrier layers replaced the intermediate Ni layer in Ti/Al/Ni/Au multilayer metallization. We observed significant difference in...

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Bibliographic Details
Published inThe Ninth International Conference on Advanced Semiconductor Devices and Mircosystems pp. 203 - 206
Main Authors Macherzynski, W., Paszkiewicz, B.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2012
Subjects
Gold
Metallization
Nickel
Nonhomogeneous media
Ohmic contacts
Surface morphology
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Summary:We tested various ohmic contact metallizations schemes on AlGaN/GaN heterostructures to achieve good surface topography and proper line edge definition. Ti, Ru, Pt and Mo barrier layers replaced the intermediate Ni layer in Ti/Al/Ni/Au multilayer metallization. We observed significant difference in proposed schemes topography and line edge definition. The Ti/Al/Mo/Au contact had not only good surface morphology but also proper line edge definition.
ISBN:1467311979
9781467311977
DOI:10.1109/ASDAM.2012.6418532