A novel BJT structure for high- performance analog circuit applications

A novel structure is proposed to improve the matching characteristics of bipolar junction transistor (BJT) based on CMOS technology for high performance analog circuit applications. This paper includes the analysis of electrical and matching characteristics in collector current density (J C ), base...

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Bibliographic Details
Published in2013 IEEE International Conference on Microelectronic Test Structures (ICMTS) pp. 104 - 107
Main Authors Seon-Man Hwang, Hyuk-Min Kwon, Jae-Hyung Jang, Ho-Young Kwak, Sung-Kyu Kwon, Seung-Yong Sung, Jong-Kwan Shin, Jae-Nam Yu, In-Shik Han, Yi-Sun Chung, Jung-Hwan Lee, Ga-Won Lee, Hi-Deok Lee
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2013
Subjects
Analog application
Analog circuits
Bipolar junction transistor (BJT)
CMOS integrated circuits
CMOS technology
Conferences
Current density
Matching coefficient
Microelectronics
Mismatch
Novel structure
Performance evaluation
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Summary:A novel structure is proposed to improve the matching characteristics of bipolar junction transistor (BJT) based on CMOS technology for high performance analog circuit applications. This paper includes the analysis of electrical and matching characteristics in collector current density (J C ), base current density (J B ) and current gain (β). Although the collector current density J C of the proposed structure is similar to that of the conventional structure, the base current density J B is lower than that of conventional structure, which results in higher current gain. The matching characteristics of the collector current density and the current gain of the proposed structure showed improvement of about 12.22% and 36.43%, respectively compared with the conventional structure.
ISBN:9781467348454
1467348457
ISSN:1071-9032
2158-1029
DOI:10.1109/ICMTS.2013.6528154