Modeling of stress evolution of electroplated Cu films during self-annealing

Electroplated Cu films are known to change their microstructure at room temperature due to the self-annealing effect. This recrystallization process results in a film-thickness-dependent stress evolution. Films with the thickness of 5μm and below decrease in stress with time, while thicker films rev...

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Bibliographic Details
Published in2010 IEEE International Reliability Physics Symposium pp. 911 - 917
Main Authors Rui Huang, Robl, Werner, Detzel, Thomas, Ceric, Hajdin
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2010
Subjects
Contracts
Copper
Cu films
Economic forecasting
Grain size
Microstructure
modeling
Power generation economics
self-annealing
stress
Temperature
Tensile stress
Thermal conductivity
Thermal resistance
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Summary:Electroplated Cu films are known to change their microstructure at room temperature due to the self-annealing effect. This recrystallization process results in a film-thickness-dependent stress evolution. Films with the thickness of 5μm and below decrease in stress with time, while thicker films reveal initially an increase in film stress followed by a stress relaxation at a later stage. This behavior is explained by the superposition of grain growth and grain size dependent yielding. Existing models have been used and improved to describe the mechanisms related to stress evolution. In general, the models proposed in this study provide a satisfactory description of the stress evolution of electroplated Cu films and the simulated results show good agreement with the experimental data. This gives the possibility to evaluate and predict mechanical behavior of electroplated Cu films at room temperature.
ISBN:1424454301
9781424454303
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2010.5488706