Electroluminescent cooling using double diode structures

The progress in optical cooling in recent years is resulting in a renewed interest in electroluminescent (EL) cooling using conventional III-V semiconductor light emitting diodes (LEDs). In this work, we address the limiting factors for observing EL cooling in III-As intracavity double diode structu...

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Published in2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 125 - 126
Main Authors Sadi, Toufik, Radevici, Ivan, Kivisaari, Pyry, Casado, Alberto, Oksanen, Jani
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2018
Subjects
Cooling
Current measurement
Light emitting diodes
Optical coupling
Radiative recombination
Stimulated emission
Temperature measurement
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Summary:The progress in optical cooling in recent years is resulting in a renewed interest in electroluminescent (EL) cooling using conventional III-V semiconductor light emitting diodes (LEDs). In this work, we address the limiting factors for observing EL cooling in III-As intracavity double diode structures (DDSs), at high powers at and close to 300K, by using a combination of experimental characterization and physical device models. The studied DDSs incorporate optically-coupled III-As LED and p-n homojunction photodiode (PD) structures, integrated in a single device and providing a favourable environment for EL cooling observation. We employ a modelling framework coupling the drift-diffusion charge transport model to a photon transport model calibrated using measurements on real devices at different temperatures. Results suggest that the bulk properties of the III-V materials are already sufficient for EL cooling.
ISSN:2158-3242
DOI:10.1109/NUSOD.2018.8570294