Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth

• Published in: 2009 IEEE International Conference on Indium Phosphide & Related Materials pp. 120 - 123
• Main Authors: Singisetti, U., Wistey, M.A., Burek, G.J., Baraskar, A.K., Cagnon, J., Thibeault, B., Gossard, A.C., Stemmer, S., Rodwell, M.J.W., Eunji Kim, Byungha Shin, McIntyre, P.C., Yong-Ju Lee
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2009
• Subjects: Degradation; Dielectrics; Effective mass; Electrons; III-V MOSFET; III-V semiconductor materials; Indium compounds; Indium gallium arsenide; InGaAs MOSFET; MBE regrowth; MEE; Molecular beam epitaxial growth; MOSFET circuits; Silicon
• ISBN: 9781424434329; 1424434327
• ISSN: 1092-8669
• DOI: 10.1109/ICIPRM.2009.5012456

A scalable, self-aligned In 0.53 Ga 0.47 As MOSFET process was developed and enhancement mode device operation was demonstrated. The 0.7 mum L g device shows a maximum drive current of 0.14 mA/mum at V gs =4.0 V and V ds =2.5 V. The devices have almost an order of magnitude larger drive current than our previously reported MOSFETs. The channel layer was 5 nm thick InGaAs with InAlAs bottom barrier for vertical confinement. 4.7 nm of Al 2 O 3 (~2 nm EOT) dielectric was deposited in an atomic layer deposition tool. After gate formation, self-aligned source/drain regions were defined by migration enhanced epitaxial (MEE) regrowth, and self-aligned in-situ Mo source/drain contacts were formed.