Crack propagation and delamination analysis within the die by camera-assisted double cantilever beam technique

Crack propagation in copper-dielectric structures is an important concern regarding die failure, requiring reliable and fast characterization of crack propagation and corresponding adhesion properties. In the present investigation, a modified double cantilever beam (DCB) technique based on optical c...

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Bibliographic Details
Published in2011 IEEE International Interconnect Technology Conference pp. 1 - 3
Main Authors Hecker, M., Hentschel, R., Hensel, M., Lehr, M. U.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2011
Subjects
Adhesives
Copper
Dielectrics
Length measurement
Materials
Structural beams
Surface cracks
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Summary:Crack propagation in copper-dielectric structures is an important concern regarding die failure, requiring reliable and fast characterization of crack propagation and corresponding adhesion properties. In the present investigation, a modified double cantilever beam (DCB) technique based on optical crack determination by gap opening measurement is utilized for local G c analysis on interconnect structures for 32 nm technology node and below. In comparison to conventional DCB test set-up, a significant increase in the number of measurement points and thus in the local resolution for G c is obtained.
ISBN:9781457705038
1457705036
ISSN:2380-632X
2380-6338
DOI:10.1109/IITC.2011.5940335