A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration

Power management and sensor driver integrated circuits need technologies with high breakdown voltage (BVdss), low on-resistance (Rsp) and preferably low process complexity and improved integration. A new 180nm High Voltage CMOS (HVCMOS) technology is described which includes LDMOS devices with 160V...

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Published in2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 75 - 78
Main Authors Minixhofer, R, Feilchenfeld, N, Knaipp, M, Röhrer, G, Park, J M, Zierak, M, Enichlmair, H, Levy, M, Loeffler, B, Hershberger, D, Unterleitner, F, Gautsch, M, Chatty, K, Shi, Y, Posch, W, Seebacher, E, Schrems, M, Dunn, J, Harame, D
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2010
Subjects
CMOS technology
Driver circuits
Energy management
Integrated circuit technology
Intelligent sensors
Power system management
Semiconductor optical amplifiers
System-on-a-chip
Technology management
Voltage
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Summary:Power management and sensor driver integrated circuits need technologies with high breakdown voltage (BVdss), low on-resistance (Rsp) and preferably low process complexity and improved integration. A new 180nm High Voltage CMOS (HVCMOS) technology is described which includes LDMOS devices with 160V BVdss and an N-LDMOS device with minimum Rsp of 14.4mOhm·mm 2 for 34V BVdss as part of a suite of LDMOS devices with 30-160V BVds. Ten year SOA lifetime and 8KV HBM ESD capability are documented to provide a HVCMOS technology which addresses the widest reported range of use voltage applications (5-120V) for 180nm and can be used for designs which require a merging of wireless and power management.
ISBN:1424477182
9781424477180
ISSN:1063-6854
1946-0201