A novel oscillation circuit using a resonant-tunneling diode

A novel oscillation circuit using a resonant-tunneling diode (RTD) is proposed. The circuit has a simple configuration consisting of an RTD, a high-electron-mobility transistor (HEMT), and an inductor. A large oscillation swing that substantially exceeds the RTD negative differential resistance regi...

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Bibliographic Details
Published in2005 IEEE International Symposium on Circuits and Systems (ISCAS) pp. 2341 - 2344 Vol. 3
Main Authors Muramatsu, N., Okazaki, H., Waho, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Circuit simulation
Current density
Diodes
Frequency
HEMTs
Inductance
Inductors
MODFETs
Resonant tunneling devices
RLC circuits
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Summary:A novel oscillation circuit using a resonant-tunneling diode (RTD) is proposed. The circuit has a simple configuration consisting of an RTD, a high-electron-mobility transistor (HEMT), and an inductor. A large oscillation swing that substantially exceeds the RTD negative differential resistance region can be obtained, since the oscillation is based on the RTD switching between the peak and valley states. To analyze the large-signal behavior, circuit simulation has been carried out. It was found that the oscillation frequency increases by increasing the RTD peak current density j/sub p/ or by decreasing the inductance L. A frequency as high as 180 GHz has been predicted when j/sub p/=1/spl times/10/sup 5/ A/cm/sup 2/ and L=0.1 nH.
ISBN:9780780388345
0780388348
ISSN:0271-4302
2158-1525
DOI:10.1109/ISCAS.2005.1465094