Monolithically integrated high-speed CMOS photonic transceivers

We demonstrate monolithically integrated 4×10 Gb/s WDM transceivers built in a production 130 nm SOI CMOS process. Only light sources are external to the chip. 40 Gb/s error-free, bidirectional transmission is demonstrated.

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Bibliographic Details
Published in2008 5th IEEE International Conference on Group IV Photonics pp. 362 - 364
Main Authors Pinguet, T., Analui, B., Balmater, E., Guckenberger, D., Harrison, M., Koumans, R., Kucharski, D., Liang, Y., Masini, G., Mekis, A., Mirsaidi, S., Narasimha, A., Peterson, M., Rines, D., Sadagopan, V., Sahni, S., Sleboda, T. J., Song, D., Wang, Y., Welch, B., Witzens, J., Yao, J., Abdalla, S., Gloeckner, S., De Dobbelaere, P., Capellini, G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2008
Subjects
CMOS
CMOS integrated circuits
modulators
Optical device fabrication
Optical fiber testing
Optical waveguides
Photonics
silicon photonics
system-on-a-chip
Transceivers
waveguide photodetectors
Wavelength division multiplexing
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Summary:We demonstrate monolithically integrated 4×10 Gb/s WDM transceivers built in a production 130 nm SOI CMOS process. Only light sources are external to the chip. 40 Gb/s error-free, bidirectional transmission is demonstrated.
ISBN:9781424417698
1424417694
ISSN:1949-2081
1949-209X
DOI:10.1109/GROUP4.2008.4638200